Molecular Beam Epitaxy (MBE) is an advanced ultra-high-vacuum facility to make compound semiconductor materials with great precision and purity. These materials are layered one on top of the other to form semiconductor devices, such as transistors and lasers, and novel materials for research and development.
Research Poster PDFs
Molecular Beam Epitaxy System and Si-Photonics Materials and Devices
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MOLECULAR BEAM EPITAXY
Figure: Schematic of the deposition process used for MBE. [courtesy Huiyun Liu]