A breakthrough in the field of quantum dot (QD) synthesis has been achieved by LCN researchers based in the Department of Physics at King's College London.
Writing in Nanoscale Horizons, Dr Yi Wang and Professor Mark Green report on a novel synthetic methodology that promises to revolutionize the production of high-quality, emission-tuneable InP-based quantum dots.
Quantum dots are nanoscale semiconductor particles that possess unique optical and electronic properties due to their size and composition. They have found applications in a wide range of fields, including displays, solar cells, biological imaging, and more. However, the most common quantum dots are based on toxic metals, such as cadmium selenide, posing environmental and health risks. Indium phosphide (InP) offers a non-toxic alternative, but its synthesis has remained relatively stagnant for decades.
The existing methods for synthesizing InP-based quantum dots rely on volatile, dangerous, and air-sensitive precursors, hindering both the safety of researchers and the scalability of industrial production.
In their report, Wang and Green detail a game-changing alternative. They have successfully employed a solid, air- and moisture-tolerant primary phosphine as a group-V precursor. This approach represents a significant departure from the conventional methods, which have relied on the highly reactive and hazardous tris(trimethylsilyl)phosphine.
"Our work addresses two critical challenges in quantum dot synthesis: safety and efficiency," explains Professor Green. "By utilizing an air-tolerant, solid phosphorous precursor, we've not only made the process safer for researchers but also streamlined the production process, making it more adaptable for both laboratory and industrial settings."
One of the key advantages of this new methodology is its compatibility with ambient conditions on laboratory benches, allowing researchers to manipulate the precursors without the need for specialized equipment or controlled environments. This innovation has the potential to significantly expedite the synthesis process and facilitate greater experimentation.
The resulting InP-based quantum dots produced using this novel method exhibit emission-tuneable properties, glowing brightly across the green to red range of the visible spectrum. This versatility is highly desirable, as it enables the engineering of core/shell architectures for various applications. The ease of the synthetic process, combined with the exceptional properties of the quantum dots, marks a pivotal advancement in the field of nanotechnology.
In conclusion, Wang and Green's work represents a significant leap forward in the synthesis of InP-based quantum dots. Their methodology addresses longstanding safety concerns and offers a more streamlined approach to production. As the field of quantum dot technology continues to grow, this innovative synthetic pathway holds the promise of enhancing the ease and efficiency of quantum dot synthesis, further fuelling advancements across various industries.
Phosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductorsY. Wang, J. Howley, E. N. Faria, C. Huang, S. Carter-Searjeant, S. Fairclough, A. Kirkland, J. J. Davis, F. Naz, M. T. Sajjad, J. M. Goicoechea and M. Green, Nanoscale Horiz., 2023, Advance Article , DOI: 10.1039/D3NH00162H
