Shallow Reactive Ion Etcher

Equipment

Overview
STS SRIE

Surface Technology Systems ICP RIE, + loadlock, samples up to 6” diameter

Gases: CH4, O2, H2, Ar, Cl, BCl3, SF6, He, N2

Process recipes for etching:

  • Diamond; Si; TiSi2; Al; GaAs and InP
Technique: