The prospect of diamond transistors moves closer as LCN and DMD sign contract6 February 2008 Diamond Microwave Devices Ltd, DMD has placed a contract with the London Centre for Nanotechnology (LCN) for studies related to diamond’s electronic properties. DMD, a subsidiary of Element Six which is the world leader in the production of all forms of synthetic diamond for industrial use, is actively working on a new generation of electronic components based on diamond rather than silicon. This work moves the prospect of active switching needed for RF components closer to reality. “The work will be to investigate the mobility of delta-doped chemical vapour deposition (CVD) diamond and to apply the results within a 2D physical model for a diamond transistor,” explains Richard Lang, general manager of DMD Ltd. Delta doping is a technique that has been proposed to enable active electronic devices such as MESFETs (MEtal Semiconductor Field Effect Transistors) to be fabricated in diamond. In this technique, a thin layer of highly boron-doped diamond buried within the intrinsic diamond donates carriers (holes) to create a conduction channel between the metal source and drain. Such a design approach is needed because only p-type dopants are currently feasible for diamond and so efforts have been focused on novel structures that can create the active switching needed for transistor function taking into account this factor. Image 1. Electronic grade diamond which forms the basis of the transistor research work. Courtesy of DMD Inc. Image 2. View of the intense plasma ignited by microwave energy and used for the growth of single crystal diamond at LCN. Source: Dr Richard Jackman (LCN). Update: Electronics Weekly featured this news as a cover story - you can see the cover here and read the article online here. |


