Takashi Matsuura

Self-limited and ultrahigh selective process for atomic layer processing. Fluorine chemistry for noble electrochemical processing. Precise and ultraclean control of plasma processing. Contact details: Office: Room 2C5 Tel: +44 (0)20 7679 2463 Ext: 32463 Fax: +44 (0)20 7679 0595 Email: t.matsuuraucl.ac.uk

Research Interests

• Atomic-layer surface processing using plasma, gas, and electrochemical processes.
• Three-dimensional artificial nanostructure fabrication.
  
• Process integration.

Other activities

• Process development consultancy.
• Cleanroom/facility operation.
• Safe use of gases and lab chemicals.

Recent Publications
http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TXF-44YVPGS-X-K&_cdi=5589&_user=125795&_orig=browse&_coverDate=02%2F14%2F2002&_sk=999109998&view=c&wchp=dGLbVzb-zSkzS&md5=02c44b2257ab9c5817020974d4cf4e11&ie=/sdarticle.pdf

Super Self‑Aligned Technology of Ultra‑Shallow Junction in MOSFETs Using Selective Si_1‑xGe_x

http://www3.interscience.wiley.com/cgi-bin/fulltext/98517312/PDFSTART
Atomically Controlled Processing for Group IV Semiconductors

http://www3.interscience.wiley.com/cgi-bin/fulltext/109607172/PDFSTART
Plasma Processing of Materials at the Atomic Scale

Biography

• B.Sc from Kyoto University
• Ph.D from University of Tokyo
• Research and Education : 17 years leading involvement in superclean project at Tohoku University
• Joining LCN as Technical Director from 2004.

Artificial fabrication of three dimensional periodic/asymmetric nanostructures.