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Dr Haitao Ye

  Contact details:
Office: 4P.2 Lab: 4.06
Tel: +44 (0)207679 9903
Ext: 39903
Fax: +44 (0)20 7679 0595
Email: haitao.yeucl.ac.uk

Research interests

  • Carbon-based nanostructures for fuel cell electrodes and hydrogen storage, in collaboration with Prof. Z. Xiao Guo at UCL Chemistry Department.
  • Diamond devices for implantable electronics – an EU programme known as ‘DREAMS’ with partners in France, Germany and the  Czech Republic.
  • High power diamond-based insulated-gate bipolar junction transistors for high temperature aerospace applications.  This program enjoys the support of Element Six  (formally De Beers Industrial Diamond) and Rolls Royce plc.
  • Growth of n-type and p-type diamond using CVD methods, and characterization. Here we actively collaborate with CEA, in Saclay, France, and NIMS in Tsukuba, Japan.
  • Diamond-neuronal interfacing. Growth of living material onto diamond field effect transistors, and two-way communication. A project in collaboration with the department of Pharmacology at UCL.
  • Medici simulation of MESFET and IGBT, in collaboration with CamSemi Ltd.

Other actvities

  • Deputy Group Leader, Diamond Electronics Group at LCN
  • Editorial Board, Nanoscience & Nanotechnology Letters (www.aspbs.com/nnl/)
  • Scientific Review Panel Member, Israel Science Foundation
  • Reviewer for Journal of Physics D: Applied Physics /Journal of Physics: Condensed Matter / Diamond & Related Materials / Semiconductor Science & Technology / Nanotechnology /Physica Status Solidi /Materials Research Society Proceedings
  • President/ Senior Advisor, Chinese Students and Scholars Association in the UK
  • Standing Committee, The Association of Chinese Engineers in the UK
  • Head of Public Relations, The Federation of Chinese Professional Societies in the UK

Biography

  • B.Eng. in Material Science and Engineering, Xi’an Jiaotong University, China (1998)
  • M.Eng. in Materials Engineering, Nanyang Technological University, Singapore (2000)
  • Ph.D. in Electronic Engineering, University College London (2004)
  • Industrial Research Fellowship, Basic Research Labs, NTT Corporation, Japan (2004-2005)
  • Research Fellow, Electronic and Electrical Engineering, UCL (2005-2008)
    o Guest Scientist to CEA, France (2007) with Dr. Philippe Bergonzo
    o Guest Scientist to AIST, Japan (2007) with Prof. Christopher Nebel
  • Senior Research Fellow, London Centre for Nanotechnology, UCL (2008-)

Recent Publications

  • M. Bevilacqua, S. Patel, A. Chaudhary, H. Ye, R. B.Jackman, Electrical properties of aggregated detonation nanodiamonds, Applied Physics Letters (in press).
  • H.Ye, N.Tumilty, M.Bevilacqua, S.Curat, and R.B.Jackman, Electronic properties of homoepitaxial (111) highly boron-doped diamond films, Journal of Applied Physics, 103 (2008) 054503.
  • H. Ye, N. Tumilty, D. Garner, and R Jackman, Device simulation and design optimization for diamond based insulator-gated bipolar transistors, Materials Research Society Proceedings 956 (2007) 275-280.
  • H. Ye, M. Kasu, Y. Yamauchi, N. Maeda, S. Sasaki, and T. Makimoto, Temperature dependent DC & RF performance of diamond MESFET, Diamond and Related Materials 15 (2006) 787-791.
  • M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, and T. Makimoto, High RF output power for H-terminated diamond FETs, Diamond and Related Materials 15 (2006) 783-786.
  • H. Ye, M. Kasu, Y. Yamauchi, N. Maeda, S. Sasaki, and T. Makimoto, RF performance of diamond MESFET at elevated temperatures and its equivalent circuit analysis, Japanese Journal of Applied Physics 45 (2006) 3609-3613.
  • M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, N. Maeda, S. Sasaki, and T. Makimoto, 2W/mm out-put power density at 1GHz for Diamond FETs, IEE Electronics Letters 41 (2005) 1249-1250.
  • S. Curat, H. Ye, O. Gaudin, R. Jackman, and S. Koizomi, An impedance spectroscopic study of n-type phosphorus doped diamond, Journal of Applied Physics 98 (2005) 073701-073706.
  • H. Ye, O Gaudin, and R.B. Jackman, Ac impedance behaviour of black diamond films, Journal of Materials Science and Technology, 21 (2005) 879-882.
  • H. Ye, H. Yan, and R.B. Jackman, Dielectric properties of single crystalline diamond, Semiconductor Science & Technology 20 (2005) 296-298.

Funding and Awards

  • Royal Academy of Engineering Research Exchange Award with China/India
  • Royal Society International Short Visiting Award
  • British Council Science Exchange Award
  • UCL Graduate School Research Funds
  • NTT Corporation Industrial Research Fellowship
  • National Chinese Scholar Research Award
  • KC Wong Education Foundation Award
  • ORS Award

Research


(a)
(b)
(c)
(d)

Fig. 1: (a) Nanoscale field-effect transistor fabricated on diamond for aerospace / satellite communication application; (b) The power characteristics of device shows the device has the output power of 2W/mm; (c) Carbon-based nanostructures synthesised for fuel cell electrodes and hydrogen storage applcations; (d) Electrode structures based on nanodiamonds for the biochemical sensing.